Details

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BUY BSM50GD120DN2E322 https://www.utsource.net/itm/p/8853242.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Blocking Voltage	V(BR)DSS	-	1200	-	V
Continuous Drain Current	ID	-	50	-	A	Tc = 25°C, Pulse width ≤ 10 μs
Gate Threshold Voltage	VGS(th)	2.0	4.0	6.0	V	ID = 1 mA
Input Capacitance	Ciss	-	3500	-	pF	VDS = 500 V, f = 1 MHz
Output Capacitance	Coff	-	270	-	pF	VDS = 500 V, f = 1 MHz
Total Power Dissipation	PD	-	-	190	W	TC = 25°C
Junction Temperature	TJ	-25	-	175	°C
Storage Temperature	Tstg	-55	-	150	°C

Instructions:

1. Handling Precautions: The BSM50GD120DN2E322 is sensitive to electrostatic discharge (ESD). Use appropriate ESD protection measures during handling and installation.
2. Mounting: Ensure that the mounting surfaces are clean and free from contaminants. Apply thermal paste if necessary for optimal heat dissipation.
3. Operating Conditions: Operate within specified voltage and current limits to avoid damage or reduced performance.
4. Thermal Management: Monitor junction temperature to ensure it remains within safe operating limits. Proper heatsinking may be required depending on application.
5. Testing: When testing the device, use recommended test conditions as specified in the datasheet to obtain accurate results.
6. Storage: Store in a dry environment within the specified storage temperature range to prevent damage.

(For reference only)