2SK1357 ,K1357

2SK1357 ,K1357

Category: Transistors

Specifications
Details

BUY 2SK1357 ,K1357 https://www.utsource.net/itm/p/8853621.html

Parameter Symbol Min Typ Max Unit Conditions
Drain-source on-state voltage Vds(on) - 0.35 - V Id = 10A, Vgs = 10V
Gate threshold voltage Vth 2.0 4.0 6.0 V Id = 1mA
Continuous drain current Id - 15 - A Tc = 25°C
Pulsed drain current Idp - 50 - A t = 1ms, Duty cycle ≤ 1%
Maximum gate-source voltage Vgs(max) -20 - 20 V -
Maximum drain-source voltage Vds(max) -100 - 100 V -
Total power dissipation Ptot - 70 - W Tc = 25°C
Junction temperature Tj - - 175 °C -

Instructions for Use of 2SK1357 (K1357)

  1. Installation:

    • Ensure the device is installed in a well-ventilated area to prevent overheating.
    • Use appropriate heat sinks if operating at high currents or in high ambient temperatures.
  2. Biasing:

    • Apply a gate-source voltage (Vgs) that is within the specified range to avoid damaging the device.
    • For optimal performance, ensure Vgs is set above the gate threshold voltage (Vth).
  3. Current Handling:

    • Do not exceed the continuous drain current (Id) or pulsed drain current (Idp) ratings to prevent damage.
    • When using pulsed current, adhere to the specified duty cycle and pulse width conditions.
  4. Voltage Ratings:

    • Ensure that both the gate-source voltage (Vgs) and drain-source voltage (Vds) do not exceed their maximum ratings.
    • Pay special attention to reverse voltage ratings as exceeding these can cause immediate failure.
  5. Thermal Management:

    • Monitor the junction temperature (Tj) to ensure it remains within safe limits.
    • Consider derating the power dissipation if operating in environments with higher ambient temperatures.
  6. Storage and Handling:

    • Store in a dry environment to prevent moisture damage.
    • Handle with care to avoid static discharge, which can damage sensitive components.

By following these instructions, you can ensure reliable and efficient operation of the 2SK1357 (K1357) device.

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