Details

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BUY MMBT5551 G1 https://www.utsource.net/itm/p/8870724.html

Parameter	Symbol	Value	Unit
Collector-Emitter Voltage	VCEO	30	V
Collector-Base Voltage	VCBO	50	V
Emitter-Base Voltage	VEBO	6	V
Continuous Collector Current	IC	150	mA
Power Dissipation	PD	300	mW
Forward Current Transfer Ratio (hFE)	-	110 to 800	-
Junction Temperature Range	TJ	-55 to 150	°C

Instructions for MMBT5551 G1:

1. Handling Precautions:

   • Use proper anti-static precautions when handling the device.
   • Avoid exceeding the maximum ratings specified in the parameter table.

2. Mounting:

   • Ensure correct pin orientation during soldering or insertion into a socket.
   • Keep lead lengths as short as possible to minimize parasitic inductance.

3. Operating Conditions:

   • Operate within the specified temperature range to avoid thermal damage.
   • Ensure adequate heat dissipation if operating near maximum power dissipation limits.

4. Testing:

   • When testing, apply voltages and currents gradually to avoid exceeding safe operating areas.
   • Use appropriate test equipment that can provide stable and precise measurements.

5. Storage:

   • Store in a cool, dry place away from direct sunlight and corrosive environments.
   • Follow recommended storage practices to maintain device integrity over time.

(For reference only)