Details

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BUY SIHP30N60E https://www.utsource.net/itm/p/8908178.html

Parameter	Symbol	Min	Typ	Max	Unit	Condition
Drain-Source Voltage	VDS	-	600	-	V
Gate-Source Voltage	VGS	-20	-	20	V
Continuous Drain Current	ID	-	30	-	A	TC = 25°C
Pulse Drain Current	IDpeak	-	180	-	A	tp = 10 μs, IG = 4 A
Total Power Dissipation	PTOT	-	-	300	W	TC = 25°C
Junction Temperature	TJ	-	-	175	°C
Storage Temperature Range	TSTG	-55	-	150	°C
Thermal Resistance, Junction to Case	RθJC	-	0.6	-	°C/W

Instructions for Use:

1. Handling and Storage:

   • Store the device in a dry environment with controlled humidity.
   • Handle the device with care to avoid mechanical damage.

2. Electrical Connections:

   • Ensure that the gate and source connections are made before applying any voltage to the drain.
   • Use appropriate insulation and isolation to prevent short circuits.

3. Thermal Management:

   • Mount the device on a suitable heatsink to ensure proper heat dissipation.
   • Monitor the junction temperature to avoid exceeding the maximum rated temperature.

4. Operating Conditions:

   • Do not exceed the maximum ratings specified in the table.
   • Ensure that the gate-source voltage (V_GS) is within the recommended range to prevent gate oxide breakdown.

5. Pulse Operation:

   • For pulse operation, ensure that the pulse duration and current do not exceed the specified limits to avoid thermal runaway.

6. Testing and Measurement:

   • Use calibrated test equipment to measure the device parameters.
   • Follow standard industry practices for testing MOSFETs to ensure accurate results.

7. Safety Precautions:

   • Always use appropriate personal protective equipment (PPE) when handling high-voltage components.
   • Ensure that all electrical connections are secure and insulated to prevent accidental contact.

For more detailed information, refer to the datasheet provided by the manufacturer.

(For reference only)