Details

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BUY SPP20N60C3 TO-220 20N60C3 https://www.utsource.net/itm/p/8909494.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-source on-state resistance	RDS(on)	-	0.27	-	Ω	VGS = 10V, ID = 4A
Threshold gate voltage	VGS(th)	2.0	-	4.0	V	ID = 250μA
Input capacitance	Ciss	-	1350	-	pF	VDS = 15V, VGS = 0V to 15V
Output capacitance	Coss	-	260	-	pF	VDS = 400V, VGS = 0V
Reverse transfer capacitance	Crss	-	380	-	pF	VDS = 400V, VGS = 0V
Continuous drain current	ID	-	20	-	A	TC = 25°C
Pulse drain current	IDM	-	120	-	A	tp = 10ms, TC = 25°C
Total power dissipation	PD	-	115	-	W	TC = 25°C
Junction temperature	TJ	-20	-	150	°C	-
Storage temperature	TSTG	-55	-	150	°C	-

Instructions for Use:

1. Handling and Storage:

   • Store in a dry place away from direct sunlight.
   • Handle with care to avoid damage to the leads and body.

2. Mounting:

   • Ensure proper heat sinking when operating at high currents or powers.
   • Use appropriate mounting hardware to secure the device firmly.

3. Electrical Connections:

   • Verify all connections are correct before applying power.
   • Ensure that the gate drive circuit can supply sufficient current to turn the MOSFET on and off quickly.

4. Operating Limits:

   • Do not exceed the maximum ratings listed in the table.
   • Operate within specified temperature ranges to ensure reliable performance.

5. Thermal Management:

   • Monitor junction temperature to prevent overheating.
   • Use thermal compounds between the MOSFET and heatsink for better thermal conductivity.

6. Safety Precautions:

   • Avoid short circuits across the drain and source terminals.
   • Follow all safety guidelines for high-voltage applications.

(For reference only)