Details

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BUY IS61C6416AL-12KLI-TR https://www.utsource.net/itm/p/8911144.html
IC SRAM 1M PARALLEL 44SOJ

Parameter	Description	Value
Device Type	High-Speed CMOS SRAM	64Mbit (8M x 8)
Package	Thin Shrink Small Outline Package (TSSOP)	48-pin
Operating Voltage	VCC	3.3V
Supply Current	Active (Typical)	70mA
Standby Current	(Typical)	2μA
Access Time	tAA (Typical)	12ns
Cycle Time	tCYC (Minimum)	12ns
Output Drive	IOL (Maximum)	32mA
Input Clamping Voltage	VIH (Maximum)	5.5V
Temperature Range	Industrial	-40°C to +85°C
Operating Temperature	Junction Temperature (TJ)	-40°C to +85°C
Storage Temperature	TSTG	-65°C to +150°C
Data Retention	(Typical)	20 years
Ordering Information	Device Code	IS61C6416AL-12KLI-TR

Instructions for Use:

1. Power Supply:

   • Ensure that the device is powered with a stable 3.3V supply.
   • Use appropriate decoupling capacitors (e.g., 0.1μF and 10μF) close to the power pins to minimize noise.

2. Signal Levels:

   • All input signals should be within the specified voltage range (0V to 3.3V).
   • Output signals will swing between 0V and 3.3V.

3. Addressing:

   • The device has 23 address lines (A0-A22) to access the 8M x 8 memory configuration.
   • Address lines should be stable before the rising edge of the clock signal.

4. Control Signals:

   • /CE (Chip Enable): Low to enable the chip.
   • /OE (Output Enable): Low to enable data output.
   • /WE (Write Enable): Low to write data to the selected address.
   • /UB (Upper Byte Enable): Low to enable the upper byte (D8-D15).
   • /LB (Lower Byte Enable): Low to enable the lower byte (D0-D7).

5. Timing:

   • Ensure that the access time (tAA) and cycle time (tCYC) are met to avoid data corruption.
   • Use appropriate timing margins to account for variations in system performance.

6. Handling:

   • Handle the device with care to avoid static discharge, which can damage the internal circuits.
   • Use proper ESD protection when handling the device.

7. Storage:

   • Store the device in a dry environment to prevent moisture damage.
   • Follow the recommended storage temperature range to ensure long-term reliability.

8. Testing:

   • Perform initial testing under controlled conditions to verify correct operation.
   • Use a known good test pattern to validate the memory functionality.

9. Documentation:

   • Refer to the datasheet for detailed electrical characteristics, mechanical dimensions, and additional specifications.
   • Consult application notes for specific use cases and advanced configurations.

(For reference only)