Details

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BUY 25AA010AT-I/OT https://www.utsource.net/itm/p/8917194.html
IC EEPROM 1K SPI 10MHZ SOT23-6

Parameter	Description	Min	Typ	Max	Unit
Capacity	Memory Size	-	1	-	Kbit
Voltage, VCC (Operating)	Supply Voltage	1.65	-	5.5	V
Current, ICC (Active)	Active Current	-	1	5	μA
Current, ICC (Standby)	Standby Current	-	0.1	1	μA
Data Retention Time	Data Retention	-	20	-	Years
Operating Temperature Range	Operating Temp	-40	-	85	°C
Storage Temperature Range	Storage Temp	-65	-	150	°C
Write Cycle Endurance	Write Cycles	-	1,000,000	-	Cycles
Programming Time	Write Time	-	5	-	ms
Package Type	Package	SOIC-8	-	-	-
Ordering Information	Part Number	25AA010AT-I/OT	-	-	-

Instructions for Use:

1. Power Supply:

   • Ensure the supply voltage (V_CC) is within the range of 1.65V to 5.5V.
   • Connect the V_CC pin to the power supply and GND pin to ground.

2. Pin Configuration:

   • SOIC-8 Pinout:
     • Pin 1: V_CC
     • Pin 2: A0 (Address Input)
     • Pin 3: A1 (Address Input)
     • Pin 4: A2 (Address Input)
     • Pin 5: WP (Write Protect)
     • Pin 6: SI (Serial Data Input)
     • Pin 7: SO (Serial Data Output)
     • Pin 8: SCK (Serial Clock)

3. Serial Communication:

   • Use SPI (Serial Peripheral Interface) protocol for communication.
   • Ensure the SCK (Serial Clock) signal is provided by the master device.
   • Data is shifted into the device on the rising edge of SCK and out on the falling edge.

4. Write Protect (WP):

   • Set WP high to enable write protection.
   • Set WP low to allow writing to the memory.

5. Programming:

   • To write data, send the appropriate command sequence followed by the address and data.
   • The typical programming time is 5ms.

6. Read Operation:

   • Send the read command followed by the address to read data from the memory.
   • Data will be shifted out on the SO (Serial Data Output) pin.

7. Temperature Considerations:

   • Ensure the operating temperature is between -40°C and 85°C.
   • Store the device in temperatures ranging from -65°C to 150°C.

8. Endurance:

   • The device can withstand up to 1,000,000 write cycles.

9. Data Retention:

   • Data retention is guaranteed for at least 20 years under normal operating conditions.

10. Handling:

    • Handle the device with care to avoid static damage.
    • Follow standard ESD (Electrostatic Discharge) precautions.

For detailed command sequences and timing diagrams, refer to the datasheet provided by the manufacturer.

(For reference only)