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BUY MT41J256M16HA-093G:E https://www.utsource.net/itm/p/8921761.html
IC DRAM 4G PARALLEL 96FBGA
Description: The MT41J256M16HA-093G:E is a 256Mb (32M x 8/16M x 16) DDR3 SDRAM from Micron. It is a high-speed, low-power memory device designed for use in a wide range of applications. Features: High-speed operation up to 1600Mbps Low-power operation at 1.35V On-die termination (ODT) for improved signal integrity Programmable burst lengths of 4, 8, and 16 Programmable burst type of sequential and interleaved Auto refresh and self-refresh Data masking and data scrambling Programmable CAS latency (CL) Programmable additive latency (AL) Programmable output driver strength Programmable write recovery time (tWR) Programmable read to precharge time (tRTP) Programmable write to read time (tWTR) Programmable read to write time (tRTW) Programmable refresh rate Programmable refresh command period (tRFC) Programmable active to precharge command period (tRAS) Programmable active to active command period (tRC) Programmable active bank A to active bank B latency (tRRD) Programmable four bank activate window (tFAW) Programmable write latency (tWL) Programmable read latency (tRL) Programmable write CAS latency (tWCL) Programmable read CAS latency (tRCL) Programmable write to precharge command period (tWR) Programmable last data out to active command time (tLZ) Programmable last data out to precharge command time (tLZ) Programmable output driver impedance control Programmable on-die termination (ODT) Applications: The MT41J256M16HA-093G:E is suitable for a wide range of applications, including: Desktop and notebook PCs Workstations Networking equipment Embedded systems Graphics cards High-performance computing Industrial automation Medical equipment Automotive systems (For reference only)