Details

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BUY IHW40N60T H40T60 https://www.utsource.net/itm/p/8928288.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source On-State Resistance	RDS(on)	-	0.26	-	Ω	VGS = 10V, ID = 20A
Gate Charge	QG	-	75	-	nC	VDS = 600V, ID = 20A
Input Capacitance	Ciss	-	4800	-	pF	VDS = 0V
Output Capacitance	Coff	-	380	-	pF	VDS = 600V
Total Capacitance	Crss	-	1200	-	pF	VDS = 600V
Continuous Drain Current	ID	-	40	-	A	TC = 25°C
Pulse Drain Current	IDM	-	120	-	A	TP = 10μs
Power Dissipation	PD	-	160	-	W	TC = 25°C
Junction Temperature	TJ	-	-	175	°C	-
Storage Temperature Range	TSTG	-55	-	150	°C	-

Instructions for IHW40N60T H40T60:

1. Handling Precautions:

   • Avoid exposing the device to excessive heat or moisture.
   • Handle with care to prevent damage to leads and packaging.

2. Mounting Guidelines:

   • Ensure proper heat sinking when operating at high power levels.
   • Follow manufacturer guidelines for mounting torque and thermal interface materials.

3. Operating Parameters:

   • Do not exceed the maximum ratings listed in the table.
   • Ensure gate drive voltage (VGS) is within specified limits to avoid damage.

4. Testing and Troubleshooting:

   • Regularly check connections for continuity and correct installation.
   • Use appropriate test equipment to verify performance parameters.

5. Storage:

   • Store in a dry, cool place away from direct sunlight.
   • Keep in original packaging until ready for use to prevent static damage.

6. Disposal:

   • Dispose of according to local regulations for electronic components.
   • Recycle whenever possible to reduce environmental impact.

(For reference only)