Details

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BUY FDP150N10 TO-220 https://www.utsource.net/itm/p/8929199.html

Parameter	Symbol	Min	Typ	Max	Unit
Drain-Source Voltage	VDS	-	100	-	V
Gate-Source Voltage	VGS	-10	0	20	V
Continuous Drain Current	ID	-	150	-	A
Pulse Drain Current	IDpeak	-	450	-	A
Power Dissipation	PTOT	-	150	-	W
Junction Temperature	TJ	-	-	175	掳C
Storage Temperature	TSTG	-55	-	150	掳C
Thermal Resistance, Junction to Case	R胃JC	-	0.65	-	掳C/W

Instructions for Use:

1. Mounting and Handling:

   • Ensure that the device is mounted on a heatsink if operating at high power levels to maintain junction temperature within safe limits.
   • Handle the device with care to avoid damage to the leads and the body.

2. Electrical Connections:

   • Connect the drain (D) to the load or circuit being controlled.
   • Connect the source (S) to the return path of the circuit.
   • Apply the gate (G) voltage to control the switching of the device.

3. Gate Drive:

   • Apply a gate-source voltage (V_GS) of at least 10V to fully turn on the MOSFET.
   • For reliable operation, keep the gate-source voltage within the specified range (-10V to +20V).

4. Thermal Management:

   • Monitor the junction temperature (T_J) to ensure it does not exceed 175掳C.
   • Use appropriate thermal management techniques such as heatsinks, fans, or heat spreaders to dissipate heat effectively.

5. Storage and Operating Conditions:

   • Store the device in a dry, cool place within the storage temperature range (-55掳C to 150掳C).
   • Operate the device within the specified operating conditions to ensure reliability and longevity.

6. Safety Precautions:

   • Avoid exceeding the maximum ratings listed in the parameter table to prevent damage to the device.
   • Use proper ESD (Electrostatic Discharge) protection when handling the device to prevent damage from static electricity.

(For reference only)