Details

---

BUY M25P40-VMN3TPB https://www.utsource.net/itm/p/8931946.html

Parameter	Description	Value	Unit
Device Type	Non-Volatile Memory	Serial Flash	-
Density	Memory Size	4 Mbit (512 K x 8)	-
Package	Package Type	8-SOIC, 8-TSSOP, 8-WSON	-
Operating Voltage (Vcc)	Supply Voltage Range	2.7 to 3.6	V
Interface	Communication Protocol	SPI (Serial Peripheral Interface)	-
Clock Frequency (fCLK)	Maximum Clock Frequency	50	MHz
Programming Time	Page Program Time (256 bytes)	3	ms
Erase Time	Sector Erase Time (4 Kbytes)	300	ms
Erase Time	Bulk Erase Time (512 Kbytes)	40	s
Endurance	Write/Erase Cycles	100,000	-
Data Retention	Minimum Data Retention	20	years
Temperature Range	Industrial Temperature Range	-40 to +85	掳C
Storage Temperature	Storage Temperature Range	-65 to +150	掳C
Standby Current (Typical)	Standby Current (Vcc = 3.0V)	1	渭A
Active Current (Typical)	Active Current (fCLK = 50MHz, Vcc = 3.0V)	3	mA

Instructions for Use:

1. Power Supply:

   • Ensure the supply voltage (Vcc) is within the specified range of 2.7V to 3.6V.
   • Connect the Vcc pin to the positive power supply and GND pin to the ground.

2. SPI Interface:

   • Connect the SPI pins as follows:
     • CS (Chip Select): Active low, must be driven low to select the device.
     • SCK (Serial Clock): Input clock signal from the master.
     • MOSI (Master Out Slave In): Data input from the master.
     • MISO (Master In Slave Out): Data output to the master.

3. Initialization:

   • Before any operation, ensure the device is selected by pulling CS low.
   • Send the appropriate command sequence to initialize the device.

4. Read Operations:

   • Use the Read Memory Command (03h) to read data from the memory.
   • Address the memory location and read the desired number of bytes.

5. Write Operations:

   • Use the Write Enable Command (06h) to enable writing.
   • Use the Page Program Command (02h) to write data to the memory.
   • Ensure the address is aligned to the page boundary (256 bytes).

6. Erase Operations:

   • Use the Write Enable Command (06h) to enable erasing.
   • Use the Sector Erase Command (20h) to erase a 4 Kbyte sector.
   • Use the Bulk Erase Command (60h) to erase the entire chip.

7. Status Register:

   • Use the Read Status Register Command (05h) to check the status of the device.
   • The status register indicates whether the device is busy or ready for operations.

8. Power Down:

   • To reduce power consumption, use the Deep Power Down Command (B9h).
   • To resume normal operation, send the Release from Deep Power Down Command (ABh).

9. Handling:

   • Handle the device with care to avoid static damage.
   • Store the device in a dry and cool environment when not in use.

10. Compliance:

    • Ensure the device complies with all relevant safety and regulatory standards for your application.

(For reference only)