Details

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BUY 2SC5888 ，C5888 https://www.utsource.net/itm/p/8932377.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	VCEO	-	-	80	V	IC = 150mA
Collector-Base Voltage	VCBO	-	-	80	V	IC = 0
Emitter-Base Voltage	VEBO	-5	-	-6	V	IE = 150mA
Collector Current	IC	-	150	300	mA	VCE = 30V
DC Current Gain	hFE	40	120	400	-	IC = 150mA, VCE = 10V
Transition Frequency	fT	-	300	-	MHz	IC = 150mA, VCE = 10V
Power Dissipation	PD	-	-	625	mW	Tc = 25°C
Junction Temperature	TJ	-55	-	150	°C
Storage Temperature	TSTG	-55	-	150	°C

Instructions for Use:

1. Mounting and Handling:

   • Handle the transistor with care to avoid damage to the leads or body.
   • Ensure proper heat sinking if operating near maximum power dissipation.

2. Electrical Connections:

   • Connect the collector (C), base (B), and emitter (E) correctly as per your circuit design.
   • Avoid exceeding the maximum ratings listed in the table to prevent damage to the device.

3. Operating Conditions:

   • Operate within specified temperature ranges to ensure reliable performance.
   • Ensure that the voltage and current limits are not exceeded during operation.

4. Testing and Troubleshooting:

   • Verify all connections before applying power.
   • Use appropriate test equipment to measure parameters like VCE, IC, and hFE.
   • If issues arise, check for correct biasing and ensure no shorts or open circuits exist.

5. Storage:

   • Store in a dry, cool place away from direct sunlight.
   • Keep in original packaging until ready for use to protect against static damage.

(For reference only)