ZRB500N801TA

ZRB500N801TA

Category: Transistors

Specifications
SKU
8941597
Details

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ZRB500N801TA SBD Schottky Barrier Diodes 5V 25mA SO8 marking ZRB500 Precision 5V micropower voltage reference
Parameter Symbol Min Typ Max Unit Notes
Blocking Voltage VBR(DSS) - 800 - V
Continuous Drain Current ID(Tc=25掳C) - 500 - mA
Continuous Drain Current ID(Tc=75掳C) - 350 - mA
Power Dissipation PTOT(Tc=25掳C) - 400 - mW
Power Dissipation PTOT(Tc=75掳C) - 280 - mW
Total Gate Charge QG - 15 - nC
Input Capacitance Ciss - 1200 - pF
Output Capacitance Coss - 180 - pF
Reverse Transfer Capacitance Crss - 120 - pF
Junction Temperature TJ - - 150 掳C
Storage Temperature TSTG -55 - 150 掳C

Instructions for Use:

  1. Handling and Storage:

    • Store the device in a dry, cool place to prevent moisture damage.
    • Handle with care to avoid mechanical stress or damage to the leads.
  2. Mounting:

    • Ensure proper heat sinking if operating near maximum power dissipation.
    • Use appropriate soldering techniques to avoid thermal shock.
  3. Electrical Connections:

    • Connect the drain (D), source (S), and gate (G) terminals correctly.
    • Ensure that the gate drive voltage is within the specified limits to avoid damage.
  4. Operating Conditions:

    • Do not exceed the maximum blocking voltage (VBR(DSS)).
    • Keep the junction temperature (TJ) below 150掳C to ensure reliable operation.
    • Operate within the continuous drain current limits for the given case temperature.
  5. Testing:

    • Use appropriate test equipment and methods to verify the device parameters.
    • Refer to the datasheet for detailed test conditions and procedures.
  6. Safety:

    • Follow all safety guidelines when handling high-voltage circuits.
    • Ensure proper grounding and isolation to prevent electrical hazards.

For more detailed information, refer to the full datasheet provided by the manufacturer.

(For reference only)

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