Details
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Parameter | Symbol | Min | Typical | Max | Unit | Conditions |
---|---|---|---|---|---|---|
On-State Resistance | RDS(on) | - | 0.95 | - | m惟 | VGS = 10V, ID = 30A |
Gate Charge | QG | - | 65 | - | nC | VDS = 400V, ID = 30A |
Input Capacitance | Ciss | - | 2200 | - | pF | VDS = 400V |
Output Capacitance | Coss | - | 170 | - | pF | VDS = 400V |
Reverse Transfer Capacitance | Crss | - | 270 | - | pF | VDS = 400V, VGS = 0V |
Continuous Drain Current | ID | - | - | 80 | A | TC = 25掳C |
Pulse Drain Current | IDm | - | - | 160 | A | TC = 25掳C, tp = 10渭s, Duty Cycle = 1% |
Maximum Drain-Source Voltage | VDS | - | - | 1000 | V | - |
Maximum Gate-Source Voltage | VGS | -15 | - | 20 | V | - |
Junction Temperature | TJ | -55 | - | 175 | 掳C | - |
Storage Temperature | TSTG | -55 | - | 150 | 掳C | - |
Instructions for Use:
Mounting and Handling:
- Ensure proper heat sinking to manage thermal dissipation.
- Handle the device with care to avoid mechanical damage.
Electrical Connections:
- Connect the drain (D), source (S), and gate (G) terminals correctly.
- Use short and thick wires to minimize parasitic inductance and resistance.
Biasing and Drive:
- Apply the appropriate gate-source voltage (VGS) to ensure proper turn-on and turn-off.
- Use a gate resistor to control the switching speed and reduce electromagnetic interference (EMI).
Thermal Management:
- Monitor the junction temperature (TJ) to ensure it does not exceed the maximum rating.
- Use thermal paste or thermal interface materials to enhance heat transfer from the device to the heatsink.
Protection Circuits:
- Implement overcurrent protection to prevent damage due to excessive current.
- Consider using a snubber circuit to protect against voltage transients.
Storage:
- Store the device in a dry, cool place within the specified storage temperature range.
- Avoid exposure to high humidity and corrosive environments.
Testing:
- Perform initial testing at low power levels to verify correct operation.
- Gradually increase power levels while monitoring device performance and temperature.
By following these guidelines, you can ensure reliable and efficient operation of the IPA80R1K0CE MOSFET.
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