Details

---

BUY F8NK85Z https://www.utsource.net/itm/p/8941868.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Breakdown Voltage	BVdss	-	850	-	V	Drain-to-Source Breakdown Voltage
Continuous Drain Current	Id	-	8	-	A	Continuous Drain Current at 25°C
Pulse Drain Current	Ipp	-	160	-	A	Pulse Drain Current (t=10μs, Duty=1%)
Gate Threshold Voltage	Vgs(th)	2.0	-	4.0	V	Gate Threshold Voltage
On-State Resistance	Rds(on)	-	0.18	-	Ω	On-State Resistance at Vgs = 10V
Input Capacitance	Ciss	-	1300	-	pF	Input Capacitance
Output Capacitance	Coff	-	100	-	pF	Output Capacitance
Reverse Transfer Capacitance	Crss	-	370	-	pF	Reverse Transfer Capacitance
Total Gate Charge	Qg	-	42	-	nC	Total Gate Charge
Switching Energy Loss	Eoss	-	120	-	nJ	Output Capacitor Energy Loss

Instructions for F8NK85Z:

1. Handling Precautions:

   • Handle the device with care to avoid damage from electrostatic discharge (ESD). Use proper ESD protection equipment.

2. Mounting:

   • Ensure proper heat sinking if operating near maximum current and voltage ratings.
   • Follow manufacturer guidelines for PCB layout and thermal management.

3. Operating Conditions:

   • Do not exceed the maximum ratings specified in the parameter table.
   • Operate within the temperature range specified by the manufacturer.

4. Gate Drive:

   • Apply gate voltages within the specified limits to ensure reliable operation.
   • Avoid rapid switching of the gate voltage to prevent excessive switching losses.

5. Testing:

   • Perform initial testing under controlled conditions to verify correct operation.
   • Regularly inspect connections and mounting hardware for signs of wear or damage.

6. Storage:

   • Store in a dry, cool place away from direct sunlight.
   • Keep in original packaging until ready for use to protect against moisture and static.

(For reference only)