Details

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BUY IRF3205S F3205S TO-263 MOS 55V/110A https://www.utsource.net/itm/p/8944571.html

Parameter	Symbol	Min	Typical	Max	Unit
Drain-Source Voltage	VDSS	-	55	-	V
Continuous Drain Current	ID	-	110	-	A (at 25掳C)
Gate-Source Voltage	VGS	-10	0	20	V
Input Capacitance	Ciss	-	4780	-	pF
Output Capacitance	Coss	-	290	-	pF
RDS(on) at VGS=10V	RDS(on)	-	5.0	-	m惟
RDS(on) at VGS=4.5V	RDS(on)	-	7.0	-	m惟
Total Gate Charge	Qg	-	104	-	nC
Power Dissipation	PTOT	-	175	-	W (at 25掳C)
Junction Temperature	TJ	-	-	175	掳C
Storage Temperature	TSTG	-55	-	150	掳C

Instructions for Use:

1. Handling Precautions:

   • Handle the IRF3205S with care to avoid static damage.
   • Use proper ESD protection when handling the device.

2. Mounting:

   • Ensure good thermal management by using a heatsink if necessary.
   • Apply thermal paste between the MOSFET and heatsink for better heat dissipation.

3. Biasing:

   • Apply the gate-source voltage (V_GS) within the specified range (-10V to +20V).
   • Ensure the gate is properly driven to minimize switching losses.

4. Current Limiting:

   • Do not exceed the maximum continuous drain current (110A at 25掳C).
   • Consider derating the current for higher ambient temperatures.

5. Thermal Management:

   • Monitor the junction temperature (T_J) to ensure it does not exceed 175掳C.
   • Use forced air cooling or a larger heatsink for high-power applications.

6. Storage:

   • Store the device in a dry, cool place within the storage temperature range (-55掳C to 150掳C).

7. Testing:

   • Test the device under controlled conditions to verify its performance.
   • Use appropriate test equipment and follow safety guidelines.

8. Application Notes:

   • Refer to the datasheet and application notes for detailed information on specific applications and circuit design considerations.

(For reference only)