MMSZ5237B T/R

MMSZ5237B T/R

Category: Transistors

Specifications
Details

BUY MMSZ5237B T/R https://www.utsource.net/itm/p/8948276.html

Parameter Symbol Conditions Min Typ Max Unit
Reverse Breakdown Voltage VBR IRR = 5mA 3.6 4.6 V
Maximum Reverse Current IR VR = VBR, TA = 25°C 5 μA
Forward Voltage VF IF = 1mA 0.7 1.0 V
Operating Junction Temperature TJ -40 85 °C
Storage Temperature TSTG -65 150 °C

Instructions for MMSZ5237B T/R:

  1. Handling and Installation:

    • Handle the device with care to avoid damage from electrostatic discharge (ESD).
    • Ensure proper heat sinking if operating near the maximum junction temperature.
  2. Reverse Bias Operation:

    • Operate within the specified reverse breakdown voltage range to prevent damage.
    • Monitor the reverse current; excessive reverse current can lead to overheating and failure.
  3. Forward Bias Operation:

    • When applying forward bias, ensure that the forward voltage does not exceed the maximum rating to avoid damaging the diode.
  4. Temperature Considerations:

    • Ensure that the operating junction temperature remains within the specified range to maintain reliable operation.
    • Store the device in an environment where the temperature stays within the storage temperature limits.
  5. Mounting Orientation:

    • Follow the manufacturer’s guidelines for correct mounting orientation to ensure optimal performance and longevity.
  6. Testing:

    • Before installation, test the device parameters under standard conditions to confirm it meets the specifications.
  7. Compliance:

    • Verify that the application complies with all relevant safety and regulatory standards.
(For reference only)

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