Details

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BUY 21N50ES https://www.utsource.net/itm/p/8964299.html

Parameter	Value	Unit
Part Number	21N50ES	-
Type	N-Channel MOSFET	-
VDS (Drain-Source Voltage)	50	V
VGS (Gate-Source Voltage)	±20	V
ID (Continuous Drain Current)	30	A
RDS(on) (On-Resistance)	0.027	Ω
Power Dissipation	140	W
Junction Temperature	-55 to +150	°C
Package	TO-220	-

Instructions for Use:

1. Installation:

   • Ensure the correct orientation of the MOSFET during installation to avoid short circuits.
   • Use a heatsink if operating near maximum power dissipation.

2. Operating Conditions:

   • Do not exceed the maximum ratings provided in the table.
   • Keep the junction temperature within specified limits to ensure reliable operation.

3. Handling:

   • Handle with care to prevent damage to the leads and body.
   • Avoid exposure to high humidity and corrosive environments.

4. Testing:

   • When testing, use appropriate safety measures to protect against electrical hazards.
   • Verify all connections are secure before applying power.

5. Storage:

   • Store in a dry, cool place away from direct sunlight.
   • Keep in original packaging until ready for use to prevent static damage.

(For reference only)