BYC20X600

BYC20X600

Category: Transistors

Specifications
Details

BUY BYC20X600 https://www.utsource.net/itm/p/8964323.html

Parameter Description Value Unit
Part Number Device Identifier BYC20X600 -
Type Component Type Diode -
Material Semiconductor Material Silicon -
Maximum Reverse Voltage (Vr) Max reverse voltage it can withstand 600 V
Maximum Forward Current (If) Max forward current it can handle 20 A
Power Dissipation (Pd) Power dissipation at max ratings 120 W
Junction Temperature (Tj) Operating temperature range for the junction -55 to 175 °C
Storage Temperature (Ts) Temperature range for storage -55 to 150 °C
Package Encapsulation type TO-220 -

Instructions:

  1. Installation: Ensure that the diode is installed in a circuit where the maximum reverse voltage does not exceed 600V and the forward current does not exceed 20A.
  2. Heat Management: Given the power dissipation of up to 120W, ensure adequate heat sinking to manage thermal conditions, especially when operating near maximum current or voltage limits.
  3. Temperature Considerations: Operate within the specified junction temperature range (-55°C to 175°C) to avoid damage. Store in environments within the storage temperature range (-55°C to 150°C).
  4. Handling Precautions: Handle with care to prevent damage to the leads and body. Follow anti-static precautions as this component is sensitive to electrostatic discharge.
  5. Mounting: Use appropriate mounting techniques for the TO-220 package to ensure good thermal contact with heat sinks if necessary.
(For reference only)

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