Details

---

BUY G40N60D https://www.utsource.net/itm/p/8964331.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Collector-Emitter Voltage	VCE	-	600	-	V	Maximum voltage between collector and emitter with the base open.
Collector-Base Voltage	VCB	-	600	-	V	Maximum voltage between collector and base with the emitter open.
Emitter-Base Voltage	VEB	-	7	-	V	Maximum voltage between emitter and base with the collector open.
Continuous Collector Current	IC	-	40	-	A	Maximum continuous current through the collector.
Pulse Collector Current	IC(pulse)	-	80	-	A	Maximum pulse current through the collector (t < 10 ms).
Power Dissipation	PT	-	250	-	W	Maximum power dissipation at TA = 25掳C.
Junction Temperature	TJ	-	150	-	掳C	Maximum junction temperature.
Storage Temperature Range	TSTG	-55	-	150	掳C	Temperature range for storage and operation.
Base-Emitter Saturation Voltage	VBE(sat)	-	1.8	2.5	V	Base-emitter voltage when the transistor is in saturation.
Collector-Emitter Saturation Voltage	VCE(sat)	-	1.2	2.0	V	Collector-emitter voltage when the transistor is in saturation.
Transition Frequency	fT	-	1.5	-	MHz	Frequency at which the current gain drops to unity.
Storage Time	tstg	-	150	-	ns	Time required for the transistor to turn off after the base drive is removed.

Instructions for Use:

1. Handling Precautions:

   • Avoid exceeding the maximum ratings listed in the table to prevent damage to the device.
   • Use proper heat sinking to manage the power dissipation, especially when operating near the maximum power limits.

2. Mounting:

   • Ensure that the device is securely mounted to a suitable heatsink to maintain the junction temperature within safe limits.
   • Use thermal compound between the device and the heatsink to improve thermal conductivity.

3. Biasing:

   • Proper biasing is crucial to ensure the transistor operates in the desired region (saturation, active, or cutoff).
   • For saturation, ensure that the base-emitter voltage (V_BE) and base current (I_B) are sufficient to fully turn on the transistor.

4. Pulse Operation:

   • When using the transistor in pulse applications, ensure that the pulse width and frequency do not exceed the maximum ratings.
   • Verify that the average power dissipation does not exceed the continuous rating.

5. Storage:

   • Store the device in a dry, cool place within the specified storage temperature range.
   • Handle with care to avoid mechanical damage or static discharge.

6. Testing:

   • Use appropriate test equipment and methods to verify the performance parameters of the transistor.
   • Ensure that the test conditions match the specifications provided in the datasheet.

(For reference only)