Details

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BUY TGAN30N120FD https://www.utsource.net/itm/p/8966665.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Drain-Source Voltage	VDSS			1200	V	Maximum drain-to-source voltage
Gate-Source Voltage	VGS	-10		15	V	Maximum gate-to-source voltage
Continuous Drain Current	IDS		30		A	Continuous drain current at TC = 25°C
Pulse Drain Current	IDP		60		A	Pulse drain current (t < 10 μs)
Power Dissipation	PD			480	W	Maximum power dissipation
Junction Temperature	TJ	-55		175	°C	Operating junction temperature range
Storage Temperature	TSTG	-55		175	°C	Storage temperature range

Instructions for Use:

1. Handling Precautions:

   • The TGAN30N120FD is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate ESD protection measures.

2. Mounting and Assembly:

   • Ensure proper thermal management by using heat sinks or other cooling methods if operating near maximum current or power.
   • Follow manufacturer guidelines for PCB layout to ensure optimal performance and reliability.

3. Operating Conditions:

   • Do not exceed the absolute maximum ratings as listed in the table.
   • Operate within specified temperature ranges to prevent damage or degradation of performance.

4. Gate Drive Requirements:

   • Ensure the gate drive circuitry provides sufficient voltage levels within the VGS limits to avoid improper switching behavior.

5. Testing and Troubleshooting:

   • Regularly check device parameters such as VDS, IDS, and temperature during operation to ensure they remain within safe operating limits.
   • If abnormal behavior is observed, disconnect power and inspect connections and components for faults.

For detailed specifications and more information, refer to the datasheet provided by the manufacturer.

(For reference only)