Details
BUY Z86E6116PSG https://www.utsource.net/itm/p/8967169.html
IC MCU 8BIT 16KB OTP 40DIP
Parameter | Description | Value |
---|---|---|
Device Type | High-Speed CMOS Static RAM | 128K x 8 |
Supply Voltage (Vcc) | Operating Voltage Range | 4.5V to 5.5V |
Standby Current (Icc) | Current Consumption in Standby Mode | 20 μA (Typical) |
Active Current (Icc) | Current Consumption in Active Mode | 70 mA (Typical) |
Access Time (tAA) | Access Time from Address Valid to Data Valid | 10 ns (Maximum) |
Cycle Time (tCYC) | Minimum Cycle Time | 15 ns (Minimum) |
Address Lines | Number of Address Lines | 17 (A0-A16) |
Data Lines | Number of Data Lines | 8 (D0-D7) |
Control Inputs | Control Signals | /CE, /OE, /WE |
Package Type | Package Style | 32-Pin Plastic SOP |
Operating Temperature | Temperature Range for Operation | -40°C to +85°C |
Storage Temperature | Temperature Range for Storage | -65°C to +150°C |
Instructions for Use
Power Supply:
- Ensure that the supply voltage (Vcc) is within the specified range of 4.5V to 5.5V.
- Connect the ground (GND) pin to a stable ground reference.
Addressing:
- Apply the desired address to the address lines (A0-A16) to select the memory location.
- The address lines should be stable before the access time (tAA) begins.
Data Input/Output:
- Data lines (D0-D7) are bidirectional and can be used for both reading and writing data.
- During a write operation, data should be applied to the data lines before the write enable (/WE) signal goes low.
- During a read operation, data will be available on the data lines after the access time (tAA).
Control Signals:
- Chip Enable (/CE): When low, the device is active. When high, the device is in standby mode.
- Output Enable (/OE): When low, the data lines are enabled for output during a read operation.
- Write Enable (/WE): When low, the device enters write mode. When high, the device is in read mode.
Timing Considerations:
- Ensure that the cycle time (tCYC) is at least 15 ns to avoid data corruption.
- The access time (tAA) must be at least 10 ns from the time the address lines are valid to when the data is valid on the data lines.
Handling and Storage:
- Store the device in a dry, temperature-controlled environment to prevent damage.
- Handle the device with care to avoid static discharge, which can damage the sensitive components.
Mounting:
- Solder the device onto the PCB using standard reflow soldering techniques.
- Ensure that all pins are properly aligned and soldered to avoid short circuits or open connections.
By following these parameters and instructions, you can ensure reliable and efficient operation of the Z86E6116PSG high-speed CMOS static RAM.
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