Details

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BUY FQP47P06 ORIGINAL GOODS IN STOCK https://www.utsource.net/itm/p/8972181.html

Parameter	Value	Unit
Type	P-Channel MOSFET	-
Drain-Source Voltage (Vds)	60	V
Continuous Drain Current (Id)	47	A
Gate-Source Voltage (Vgs)	卤20	V
Power Dissipation (Pd)	155	W
Rds(on) at Vgs = -4.5V	4.8	m惟
Rds(on) at Vgs = -10V	3.8	m惟
Junction Temperature (Tj)	-55 to +150	掳C
Storage Temperature (Tstg)	-65 to +150	掳C
Package	TO-220	-

Instructions for Use:

1. Handling:

   • Handle the FQP47P06 with care to avoid damage to the leads or the body.
   • Use anti-static precautions to prevent electrostatic discharge (ESD) damage.

2. Mounting:

   • Ensure proper alignment of the leads with the PCB pads.
   • Apply appropriate torque when soldering to avoid mechanical stress.
   • Use a heat sink if necessary to manage thermal dissipation, especially under high current conditions.

3. Biasing:

   • Ensure that the gate-source voltage (Vgs) is within the specified range (卤20V) to prevent gate oxide breakdown.
   • Keep the drain-source voltage (Vds) below the maximum rating (60V) to avoid device failure.

4. Thermal Management:

   • Monitor the junction temperature (Tj) to ensure it remains within the operating range (-55掳C to +150掳C).
   • Use thermal paste and a heatsink if the device is expected to operate at high power levels.

5. Testing:

   • Test the device in a controlled environment to verify its performance before integrating it into the final application.
   • Check for continuity and resistance values to ensure the device is functioning correctly.

6. Storage:

   • Store the FQP47P06 in a dry, cool place to prevent moisture damage.
   • Keep the devices in their original packaging until ready for use to protect against ESD.

7. Soldering:

   • Use a soldering iron with a temperature setting suitable for the TO-220 package.
   • Avoid overheating the leads during soldering to prevent damage to the internal structure of the MOSFET.

By following these instructions, you can ensure optimal performance and longevity of the FQP47P06 P-Channel MOSFET.

(For reference only)