Details

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BUY LTV-1008 https://www.utsource.net/itm/p/8973808.html

Parameter	Specifications
Type	Photocoupler
Output Device	Silicon NPN Transistor
Collector-Emitter Voltage (VCE)	70 V
Collector Current (IC)	50 mA
Emitter-Base Voltage (VEB)	5.5 V
Forward Current (IF)	20 mA
Isolation Voltage	3750 Vrms
Operating Temperature (Topr)	-40掳C to +105掳C
Storage Temperature (Tstg)	-40掳C to +125掳C
Response Time (trrise)	5 渭s (Typ.)
Response Time (tfall)	2 渭s (Typ.)
Current Transfer Ratio (CTR)	50% to 600% @ IF = 5 mA, IC = 5 mA

Instructions for Use:

1. Handling Precautions: Handle with care to avoid damage from electrostatic discharge (ESD). Use appropriate ESD protection measures.
2. Mounting: Ensure proper alignment during mounting to avoid stress on the leads which can cause damage.
3. Soldering: Use a soldering temperature of 260掳C for no more than 10 seconds. Avoid excessive heat as it can damage the device.
4. Electrical Connections: Connect the device according to the circuit diagram provided in the datasheet. Ensure correct polarity for the input and output sides.
5. Operational Limits: Do not exceed the maximum ratings specified in the parameter table. Operating outside these limits can result in permanent damage.
6. Environmental Conditions: Store and operate within the specified temperature ranges to ensure reliable performance.
7. Testing: Before integrating into a final application, test the device under conditions similar to those expected in actual use.

(For reference only)