Details

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BUY FDA24N50F 24A 500V MOS TO-3P https://www.utsource.net/itm/p/8975862.html

Parameter	Symbol	Value	Unit	Notes
Drain-Source On-State Resistance	RDS(on)	0.12	Ω	At VGS = 10V, ID = 24A
Gate-Source Voltage	VGS	±20	V	Maximum
Drain-Source Voltage	VDS	500	V	Maximum
Continuous Drain Current	ID	24	A	At Tc = 25°C
Pulse Drain Current	IDM	80	A	Pulse width ≤ 10μs, I2t = 6400A2s
Power Dissipation	PD	390	W	At Tc = 25°C
Junction Temperature	TJ	-55 to +175	°C	Operating range
Storage Temperature	TSTG	-55 to +150	°C	Storage range

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking when mounting the TO-3P package to maintain operational temperatures within specified limits.
   • Handle with care to avoid damage to the leads and body.

2. Electrical Connections:

   • Connect the gate lead carefully to prevent excessive inductance which can cause ringing or oscillation.
   • Ensure all connections are secure to avoid intermittent operation.

3. Operating Conditions:

   • Operate within the specified temperature and voltage ranges to ensure reliable performance.
   • Avoid exceeding the maximum ratings as this can lead to device failure.

4. Testing:

   • When testing, use appropriate safety measures and adhere to the specified test conditions to obtain accurate results.
   • Do not exceed the pulsed current rating for more than the specified pulse width to prevent overheating.

5. Storage:

   • Store in a dry, cool place within the specified storage temperature range to prevent degradation of electrical properties.

(For reference only)