Details

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BUY 2SA2003 https://www.utsource.net/itm/p/8983947.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Collector-Emitter Voltage	VCEO	-	-	80	V	Maximum voltage between collector and emitter with the base open.
Emitter-Collector Voltage	VECE	-	-	80	V	Maximum voltage between emitter and collector with the base open.
Base-Emitter Voltage	VBE	-5	-	5	V	Maximum voltage between base and emitter.
Collector Current	IC	-	-	150	mA	Maximum continuous collector current.
Power Dissipation	PD	-	-	625	mW	Maximum power dissipation at Tc = 25°C.
Operating Temperature	TO	-55	-	150	°C	Operating junction temperature range.

Instructions for Use:

1. Handling Precautions: Avoid exceeding the maximum ratings listed in the table to prevent damage to the device.
2. Mounting: Ensure proper heat dissipation if operating near maximum power dissipation limits. Consider using a heatsink if necessary.
3. Storage: Store in a dry, cool place away from direct sunlight and corrosive materials.
4. Soldering: Use temperatures within safe limits (typically not exceeding 300°C) and avoid prolonged exposure during soldering to protect the transistor from thermal damage.
5. Biasing: Carefully set biasing conditions to ensure the transistor operates within its safe operating area (SOA).

(For reference only)