Details

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BUY MT29F4G16ABADAWP:D https://www.utsource.net/itm/p/8989120.html

Parameter	Description
Part Number	MT29F4G16ABADAWP:D
Type	NAND Flash Memory
Capacity	4 Gb (512Mb x 8)
Organization	16,384 Pages per Block
Page Size	2,112 Bytes (2,048 Bytes Data + 64 Bytes Spare Area)
Block Size	128 Pages
Voltage - Supply	Vcc = 2.7V to 3.6V, VccQ = 1.7V to 3.6V
Interface	ONFI 2.3 (Toggle Mode)
Data Rate	Up to 133 MT/s
Operating Temperature	-40°C to +85°C
Package	BGA-169
RoHS Compliant	Yes

Instructions for Use:

1. Power Supply Requirements: Ensure that the supply voltages (Vcc and VccQ) are within the specified range to avoid damage to the device.
2. Initialization: Upon power-up, initialize the device using the appropriate command sequence as defined in the ONFI specification.
3. Read/Write Operations: Perform read and write operations following the ONFI protocol. Pay attention to the busy status before initiating new commands.
4. Erase Operations: Blocks must be erased before they can be programmed. Use the block erase command to clear data from a block.
5. Error Handling: Implement error correction algorithms to handle bit errors, especially during read operations.
6. Temperature Considerations: Operate the device within the specified temperature range to ensure reliable performance.
7. Handling Precautions: Handle the device with care to prevent electrostatic discharge (ESD) damage. Use proper ESD protection measures during handling and installation.

(For reference only)