Details

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BUY IRFB31N20DPBF N-CHANNEL 200V 31A (TC) 3.1W (TA), 200W (TC) THROUGH HOLE TO-220AB IRFB31N20D https://www.utsource.net/itm/p/9225047.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Drain-Source Voltage	VDSS				200	V
Gate-Source Voltage	VGS		-10		20	V
Continuous Drain Current	ID	TC = 25°C			31	A
Pulse Drain Current	IDM	TC = 25°C, t = 8.3ms			200	A
Power Dissipation	PD	TA = 25°C			3.1	W
Power Dissipation	PD	TC = 25°C			200	W
Junction Temperature	Tj				175	°C
Storage Temperature	Tstg		-55		150	°C

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper handling to prevent damage to the component.
   • Mount the device on a suitable heatsink if operating at high power levels.

2. Electrical Connections:

   • Connect the drain (D), source (S), and gate (G) terminals as per your circuit design.
   • Ensure that the gate voltage does not exceed the maximum rating to avoid damaging the MOSFET.

3. Thermal Management:

   • For continuous operation at higher currents, use adequate cooling methods such as heatsinks or forced air cooling.
   • Monitor the junction temperature to ensure it stays within safe limits.

4. Pulse Operation:

   • When using the device in pulse applications, ensure that the pulse width and frequency do not exceed the thermal limitations.

5. Storage and Operating Temperatures:

   • Store the device within the specified storage temperature range to prevent degradation.
   • Operate the device within the junction temperature limits to ensure reliable performance.

6. Safety Precautions:

   • Always follow safety guidelines when working with high voltages and currents.
   • Ensure proper insulation and isolation of the MOSFET from other components and users.

(For reference only)