1N4001 DIODE GEN PURP 50V 1A DO41

1N4001 DIODE GEN PURP 50V 1A DO41

Category: Transistors

Specifications
Details

BUY 1N4001 DIODE GEN PURP 50V 1A DO41 https://www.utsource.net/itm/p/9225081.html

Parameter Value Unit
Type General Purpose
Maximum Repetitive Peak Inverse Voltage (VRRM) 50 V
Average Rectified Forward Current (IF(AV)) 1 A
Maximum Repetitive Peak Reverse Current at 25°C (IR) 5 μA
Junction Operating Temperature Range (TJ) -55 to 175 °C
Case Style DO-41
Forward Voltage (VF) 1.1 V (at IF=1A)
Reverse Recovery Time (trr) 30 μs

Instructions for Use:

  1. Mounting: Ensure the diode is mounted in a way that it does not exceed its maximum temperature ratings. Adequate heat sinking may be required for applications where the diode will conduct significant current continuously.
  2. Polarity: Pay attention to the polarity of the diode. The cathode (negative side) is usually marked with a band on the body. Incorrect polarity can lead to immediate failure.
  3. Voltage and Current Ratings: Do not exceed the maximum voltage (50V) or current (1A) ratings to avoid damage. For higher power applications, consider using multiple diodes in parallel or a higher-rated component.
  4. Storage: Store in a dry, cool place away from direct sunlight and sources of heat. Avoid exposure to corrosive environments.
  5. Handling: Handle with care to prevent physical damage. Electrostatic discharge (ESD) is generally not a concern for this type of diode, but standard anti-static precautions should still be followed in sensitive environments.
(For reference only)

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