Details
BUY FQD13N10L,FQD13N10LTM https://www.utsource.net/itm/p/9226174.html
Parameter | FQD13N10L / FQD13N10LTM |
---|---|
Device Type | N-Channel MOSFET |
Voltage (Vds) (V) | 100 |
Current (Id) (A) | 13 |
Power Dissipation (Pd) (W) | 115 (at Tc = 25掳C) |
Rds(on) (m惟) | 7.5 (at Vgs = 10V) |
Gate Charge (Qg) (nC) | 16.9 |
Input Capacitance (Ciss) (pF) | 1490 |
Output Capacitance (Coss) (pF) | 380 |
Reverse Transfer Capacitance (Crss) (pF) | 350 |
Thermal Resistance (Rth(j-c)) (掳C/W) | 1.1 (TO-220) / 0.6 (TO-220F) |
Operating Temperature Range (掳C) | -55 to 150 |
Package | TO-220 / TO-220F |
Instructions for Use:
Handling and Storage:
- Handle with care to avoid damage to the device.
- Store in a dry environment to prevent moisture damage.
Mounting:
- Ensure proper heat sinking if operating at high power levels.
- Use thermal paste between the device and heat sink for better thermal conductivity.
Biasing:
- Apply a gate-source voltage (Vgs) of at least 10V to ensure full enhancement and minimize Rds(on).
- Do not exceed the maximum Vgs rating of 卤20V.
Operation:
- Operate within the specified temperature range (-55掳C to 150掳C) to avoid thermal runaway.
- Monitor the junction temperature to ensure it does not exceed the maximum allowable value.
Testing:
- Use a constant current source to test the device under load conditions.
- Measure Rds(on) with a multimeter or resistance tester to verify proper operation.
Safety:
- Always use appropriate protective equipment when handling high-voltage circuits.
- Ensure proper grounding and isolation to prevent electrical shock.
Soldering:
- Preheat the PCB to reduce thermal stress during soldering.
- Use a temperature-controlled soldering iron and avoid excessive heat application.
Troubleshooting:
- If the device fails, check for overvoltage, overcurrent, or overheating conditions.
- Verify the gate drive circuit for proper operation.
By following these guidelines, you can ensure reliable and efficient operation of the FQD13N10L and FQD13N10LTM MOSFETs.
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