Details

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BUY FP7171DR-G1 https://www.utsource.net/itm/p/9226322.html

Parameter	Description	Value
Part Number	Device Identifier	FP7171DR-G1
Type	Device Type	MOSFET
Package	Encapsulation	TO-252 (DPAK)
**Drain Source Voltage	Maximum Drain to Source Voltage	70V
Continuous Drain Current	Continuous Drain Current at TC = 25°C, VGS = 10V	4.6A
Pulse Drain Current	Pulse Drain Current (t脉冲 = 300 μs, Duty Cycle = 1%)	12.5A
Gate Threshold Voltage	Gate Threshold Voltage (Min/Max)	1.0V / 2.5V
On-State Resistance	On-State Resistance at VGS = 10V	0.045Ω
Total Power Dissipation	Total Power Dissipation (TC = 25°C)	1.8W
Operating Temperature Range	Operating Junction Temperature Range	-55°C to 150°C
Storage Temperature Range	Storage Temperature Range	-65°C to 150°C

Instructions for Use:

1. Mounting: Ensure the device is mounted on a suitable heatsink if operating near maximum power dissipation.
2. Handling: Handle with care to avoid damage to the leads and package. Follow ESD protection guidelines.
3. Soldering: Solder within the recommended temperature and time limits to prevent thermal damage.
4. Testing: When testing, ensure all voltages and currents do not exceed the maximum ratings specified.
5. Application: Suitable for applications requiring low on-resistance and high efficiency in switching circuits.

(For reference only)