BTA100-800B 100A 800V

BTA100-800B 100A 800V

Category: Transistors

Specifications
Details

BUY BTA100-800B 100A 800V https://www.utsource.net/itm/p/9226446.html

Parameter Symbol Value Unit
Maximum Repetitive Peak Off-State Voltage V DRM 800 V
Maximum RMS On-State Current (10 s) I T(RMS) 100 A
Maximum Non-Repetitive Peak On-State Current I TSM 600 A
Maximum Junction Temperature T J(MAX) 125 °C
Total Device Dissipation P T 140 W
Gate Trigger Current I GT 5 mA
Holding Current I H 5 mA
Storage Temperature Range T STG -55 to 125 °C

Instructions for BTA100-800B

  1. Mounting and Handling:

    • Ensure proper heat sinking to manage the thermal dissipation.
    • Handle with care to avoid damage to the sensitive gate.
  2. Power Supply Connection:

    • Connect the device within its specified voltage and current limits.
    • Use appropriate fuses or circuit breakers to protect against overcurrent conditions.
  3. Gate Drive:

    • Apply a gate trigger current (I_GT) of at least 5mA to turn on the device.
    • Ensure the gate drive circuit can provide sufficient current to maintain operation above the holding current (I_H).
  4. Thermal Management:

    • Monitor junction temperature (T_J) not to exceed 125°C.
    • Consider derating the current if operating near maximum temperatures.
  5. Storage Conditions:

    • Store in a dry, cool environment within the storage temperature range (-55°C to 125°C).
  6. Safety Precautions:

    • Always disconnect power before performing any maintenance or adjustments.
    • Follow all relevant safety standards and guidelines when installing and using the device.
(For reference only)

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