D20SB80

D20SB80

Category: Transistors

Specifications
SKU
9226510
Details

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Parameter Symbol Min Typ Max Unit Description
Reverse Voltage VR - - 80 V Maximum reverse voltage
Average Rectified Current IO - 20 - A Average rectified current
Peak Forward Surge Current IFSM 150 - - A Peak forward surge current (8.3 ms, sine half wave)
Forward Voltage at IF = 5 A VF - 1.1 - V Forward voltage drop at 5 A
Reverse Current at VR = 80 V IR - 5 - 渭A Reverse leakage current
Junction Temperature Tj - - 175 掳C Maximum junction temperature
Storage Temperature Tstg -65 - 175 掳C Operating storage temperature range
Thermal Resistance, Junction to Case R胃JC - 1.0 - 掳C/W Thermal resistance from junction to case

Instructions:

  1. Mounting: Ensure proper heat sinking to maintain the junction temperature within the specified limits.
  2. Surge Current Handling: The diode can handle peak forward surge currents up to 150 A for 8.3 ms sine half-wave pulses. Ensure that the application does not exceed this limit.
  3. Reverse Voltage: Do not exceed the maximum reverse voltage of 80 V to prevent breakdown.
  4. Forward Current: The average rectified current should not exceed 20 A to avoid overheating.
  5. Temperature Management: Operate the diode within the specified junction and storage temperature ranges to ensure reliability and longevity.
  6. Storage: Store the diode in a dry, cool place to prevent damage.
  7. Handling: Handle with care to avoid mechanical stress or damage to the leads.
(For reference only)

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