Details
BUY D20SB80 https://www.utsource.net/itm/p/9226510.html
Parameter | Symbol | Min | Typ | Max | Unit | Description |
---|---|---|---|---|---|---|
Reverse Voltage | VR | - | - | 80 | V | Maximum reverse voltage |
Average Rectified Current | IO | - | 20 | - | A | Average rectified current |
Peak Forward Surge Current | IFSM | 150 | - | - | A | Peak forward surge current (8.3 ms, sine half wave) |
Forward Voltage at IF = 5 A | VF | - | 1.1 | - | V | Forward voltage drop at 5 A |
Reverse Current at VR = 80 V | IR | - | 5 | - | 渭A | Reverse leakage current |
Junction Temperature | Tj | - | - | 175 | 掳C | Maximum junction temperature |
Storage Temperature | Tstg | -65 | - | 175 | 掳C | Operating storage temperature range |
Thermal Resistance, Junction to Case | R胃JC | - | 1.0 | - | 掳C/W | Thermal resistance from junction to case |
Instructions:
- Mounting: Ensure proper heat sinking to maintain the junction temperature within the specified limits.
- Surge Current Handling: The diode can handle peak forward surge currents up to 150 A for 8.3 ms sine half-wave pulses. Ensure that the application does not exceed this limit.
- Reverse Voltage: Do not exceed the maximum reverse voltage of 80 V to prevent breakdown.
- Forward Current: The average rectified current should not exceed 20 A to avoid overheating.
- Temperature Management: Operate the diode within the specified junction and storage temperature ranges to ensure reliability and longevity.
- Storage: Store the diode in a dry, cool place to prevent damage.
- Handling: Handle with care to avoid mechanical stress or damage to the leads.
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