Details

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BUY Y140NS10 ST MOS 140A 100V https://www.utsource.net/itm/p/9250336.html

Parameter	Symbol	Min	Typical	Max	Unit
Drain-Source On-State Resistance (at ID=10A, VGS=10V)	RDS(on)	-	4.5	-	mΩ
Continuous Drain Current (Tc=25°C)	ID	-	140	-	A
Continuous Drain Current (Tc=100°C)	ID	-	84	-	A
Pulse Drain Current	IDM	-	360	-	A
Gate-Source Voltage	VGS	-15	0	+20	V
Drain-Source Breakdown Voltage	BVDSS	-	100	-	V
Gate Threshold Voltage	VGS(th)	2.0	-	4.0	V
Total Gate Charge	Qg	-	97	-	nC
Input Capacitance	Ciss	-	2500	-	pF
Output Capacitance	Coss	-	480	-	pF
Reverse Transfer Capacitance	Crss	-	280	-	pF

Instructions for Use:

1. Handling Precautions:

   • Handle the MOSFET with care to avoid damage to the sensitive components.
   • Use appropriate ESD (Electrostatic Discharge) protection measures.

2. Mounting:

   • Ensure proper thermal management by using heatsinks or heat spreaders if necessary.
   • Follow the manufacturer’s guidelines for mounting torque and surface finish.

3. Operating Conditions:

   • Operate within specified temperature ranges to ensure reliability.
   • Ensure that the drain current does not exceed the continuous or pulse ratings.
   • Maintain gate-source voltage within the specified limits to prevent gate oxide breakdown.

4. Testing:

   • Perform initial testing at lower currents and voltages to verify correct operation.
   • Use recommended test circuits and procedures for accurate parameter measurements.

5. Storage:

   • Store in a dry environment away from direct sunlight and extreme temperatures.
   • Keep in original packaging until ready for use to protect against static damage.

For detailed application notes and more specific information, refer to the official STMicroelectronics documentation for the Y140NS10.

(For reference only)