Details

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BUY 2SK790 K790 MOS 15A 500V TOSHIBA https://www.utsource.net/itm/p/9250469.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Drain-source voltage	VDSS				500	V
Gate-source voltage	VGS		-10		10	V
Continuous drain current	ID	TC = 25°C		15		A
		TC = 70°C		10		A
RDS(on)	RDS(on)	VGS = 10V, ID = 5A		0.18		Ω
Input capacitance	Ciss	VDS = 25V, f = 1MHz		360		pF
Output capacitance	Coss	VDS = 25V, f = 1MHz		18		pF
Reverse transfer capacitance	Crss	VDS = 25V, f = 1MHz		24		pF
Gate charge	Qg	VDS = 25V, VGS = 10V		24		nC

Instructions for Use:

1. Installation: Ensure that the device is installed in a circuit where the maximum ratings are not exceeded. Pay particular attention to the drain-source voltage (VDSS) and continuous drain current (ID).

2. Heat Dissipation: For applications where the MOSFET will be operating near its maximum current rating, ensure adequate heat dissipation. This may involve using a heatsink or ensuring sufficient airflow.

3. Gate Drive: The gate-source voltage (VGS) should be carefully controlled. Exceeding the maximum VGS can lead to damage of the gate oxide layer. Typically, a VGS of 10V is used to fully turn on the MOSFET.

4. Capacitance Considerations: The input, output, and reverse transfer capacitances affect the switching speed of the MOSFET. Lower capacitance values contribute to faster switching times but also require careful consideration in high-frequency applications.

5. Storage and Handling: Store in a dry environment and handle with care to prevent electrostatic discharge (ESD), which can damage sensitive components like MOSFETs.

6. Safety Precautions: Always follow proper safety procedures when working with electrical components. Ensure that all power sources are disconnected before making adjustments or repairs.

For detailed specifications and additional information, refer to the official datasheet provided by TOSHIBA.

(For reference only)