Details

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BUY H11F1S https://www.utsource.net/itm/p/9254293.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Forward Voltage	VF	-	1.2	1.5	V	Voltage at which the device conducts forward current
Forward Current	IF	-	10	30	mA	Maximum continuous forward current
Reverse Voltage	VR	-	-	5	V	Maximum reverse voltage
Reverse Current	IR	-	1	5	渭A	Leakage current at maximum reverse voltage
Isolation Voltage	VISO	-	-	2500	Vrms	Voltage isolation between input and output
Operating Temperature	TOP	-40	-	105	掳C	Temperature range for normal operation
Storage Temperature	TSTG	-55	-	150	掳C	Temperature range for storage

Instructions:

1. Forward Biasing:

   • Ensure that the forward voltage (V_F) is within the specified range to avoid damage.
   • Do not exceed the maximum forward current (I_F) to prevent overheating and potential failure.

2. Reverse Biasing:

   • The device should not be subjected to a reverse voltage (V_R) higher than the maximum specified to avoid breakdown.

3. Isolation:

   • Maintain the isolation voltage (V_ISO) to ensure safe electrical isolation between the input and output circuits.

4. Temperature:

   • Operate the device within the specified operating temperature (T_OP) range to ensure reliable performance.
   • Store the device within the storage temperature (T_STG) range to prevent damage during non-operational periods.

5. Handling:

   • Handle the device with care to avoid mechanical stress and electrostatic discharge (ESD) damage.
   • Use appropriate ESD protection measures when handling or soldering the device.

6. Mounting:

   • Follow recommended soldering profiles and temperatures to avoid thermal shock and ensure proper solder joint formation.
   • Ensure adequate cooling if the device will be operated at high current levels.

(For reference only)