Details

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BUY MRF9030GN https://www.utsource.net/itm/p/9268777.html

Parameter	Description
Part Number	MRF9030GN
Type	RF Power MOSFET
Package Type	TO-247
Pulsed Drain Current (IDM)	150A Peak at TC = 25°C, Pulse Width ≤ 10μs, Duty Cycle ≤ 0.1%
Continuous Drain Current (ID)	30A at TC = 25°C
Gate Charge (Qg)	185nC at VGS = ±10V, IDS = 10A
Input Capacitance (CISS)	2280pF at VDS = 15V, f = 1MHz
Output Capacitance (COSS)	150pF at VDS = 15V, f = 1MHz
Reverse Transfer Capacitance (CRSS)	650pF at VDS = 15V, ID = 1mA
Drain-Source Voltage (VDS)	50V
Gate-Source Voltage (VGS)	±20V
Power Dissipation (PD)	150W at TC = 25°C
Thermal Resistance (RθJC)	0.45°C/W Junction to Case
Operating Temperature Range (TJ)	-55°C to +175°C

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking when mounting the device.
   • Handle with care to avoid damage to the gate terminal which is sensitive to ESD (Electrostatic Discharge).

2. Biasing:

   • Apply gate-source voltage within the specified limits to prevent damage.
   • Ensure that the gate drive circuitry can supply sufficient current to charge/discharge the gate capacitance quickly.

3. Heat Management:

   • Monitor operating temperatures closely. Exceeding the maximum junction temperature can lead to device failure.
   • Use thermal management techniques such as heatsinks or forced air cooling if necessary.

4. Pulsed Operation:

   • For pulsed applications, ensure pulse width and duty cycle do not exceed recommended values to avoid overheating.

5. Storage:

   • Store in a dry, cool environment away from direct sunlight and sources of heat.
   • Keep in original packaging until ready for use to protect against static discharge.

6. Safety Precautions:

   • Always follow safe work practices when handling high-power devices.
   • Be aware of potential hazards associated with high voltages and currents.

(For reference only)