2SC3332S

2SC3332S

Category: Transistors

Specifications
Details

BUY 2SC3332S https://www.utsource.net/itm/p/9270252.html

Parameter Symbol Conditions Min Typ Max Unit
Collector-Emitter Voltage VCEO IC = 0 - - 60 V
Collector-Base Voltage VCBO IC = 0 - - 80 V
Emitter-Base Voltage VEBO IE = 5mA - - 5 V
Collector Current IC VCE = 30V - 100 - mA
DC Current Gain hFE IC = 10mA, VCE=5V 40 200 600 -
Transition Frequency fT IC = 10mA, VCE=5V - 250 - MHz
Storage Temperature Tstg -55 - 150 °C

Instructions for Use:

  1. Mounting and Handling:

    • Handle the 2SC3332S with care to avoid damage to its leads or body.
    • Ensure proper mounting on a heat sink if necessary to dissipate heat effectively.
  2. Biasing:

    • The device should be biased in a way that the operating point remains within the safe operating area (SOA).
  3. Operating Voltage and Current:

    • Do not exceed the maximum ratings specified in the table. Exceeding these values can lead to permanent damage.
  4. Heat Dissipation:

    • If the device is expected to operate at high currents or in high ambient temperatures, ensure adequate heat dissipation to keep the junction temperature within limits.
  5. Storage and Environment:

    • Store the device in a dry place away from direct sunlight and sources of heat.
    • Avoid exposure to corrosive environments.
  6. Testing:

    • When testing the device, use appropriate test equipment and follow safety guidelines to prevent damage.
  7. Application Circuits:

    • Refer to application notes and circuit diagrams provided by the manufacturer for optimal performance in specific applications.
(For reference only)

View more about 2SC3332S on main site