Details

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BUY AT45DB041E-SSHN-T https://www.utsource.net/itm/p/9272014.html
IC FLASH 4M SPI 85MHZ 8SOIC

Parameter	Symbol	Min	Typ	Max	Unit
Supply Voltage	VCC	2.7	-	3.6	V
Operating Temperature Range	Toper	-40	-	85	°C
Storage Temperature Range	Tstg	-65	-	150	°C
Data Output High Level	VOH	2.4	-	VCC-0.1	V
Data Output Low Level	VOL	0	-	0.4	V
Input Leakage Current	IIH	-	-	1	μA
Input Leakage Current (Low)	IIL	-	-	1	μA
Active Current	IAV	-	25	-	mA
Standby Current	ISB	-	10	-	μA
Page Program Time	tPP	-	3	-	ms
Sector Erase Time	tSE	-	40	-	ms
Block Erase Time	tBE	-	75	-	ms
Chip Erase Time	tCE	-	200	-	ms
Data Retention	-	-	20	-	years

Instructions for AT45DB041E-SSHN-T

1. Power Supply:

   • Ensure the supply voltage (VCC) is within the range of 2.7V to 3.6V.
   • Connect the ground (GND) pin to a stable reference ground.

2. Temperature Considerations:

   • Operate the device within the temperature range of -40°C to 85°C.
   • Store the device within the temperature range of -65°C to 150°C.

3. Signal Levels:

   • Ensure that the data output high level (VOH) is at least 2.4V and no higher than VCC - 0.1V.
   • Ensure that the data output low level (VOL) is no higher than 0.4V.
   • Keep input leakage currents (IIH, IIL) below 1μA.

4. Current Consumption:

   • The active current (IAV) should be around 25mA.
   • The standby current (ISB) should be around 10μA.

5. Programming and Erasing:

   • Page program time (tPP) is typically 3ms.
   • Sector erase time (tSE) is typically 40ms.
   • Block erase time (tBE) is typically 75ms.
   • Chip erase time (tCE) is typically 200ms.

6. Data Retention:

   • The device is designed to retain data for up to 20 years under normal operating conditions.

7. Handling and Storage:

   • Handle the device with care to avoid electrostatic discharge (ESD).
   • Store the device in a dry, cool place to prevent damage.

8. Pin Configuration:

   • Refer to the datasheet for the specific pin configuration and ensure all pins are connected correctly.

9. Initialization:

   • Before performing any operations, initialize the device by applying the correct power supply and grounding.

10. Command Sequence:

    • Use the appropriate command sequences for read, write, and erase operations as specified in the datasheet.

For detailed information and specific command sequences, refer to the AT45DB041E-SSHN-T datasheet provided by the manufacturer.

(For reference only)