MMSZ5231BT1G SOD123

MMSZ5231BT1G SOD123

Category: Transistors

Specifications
Details

BUY MMSZ5231BT1G SOD123 https://www.utsource.net/itm/p/9275091.html

Parameter Symbol Test Conditions Min Typ Max Unit
Reverse Voltage VR 30 V
Reverse Current IR VR = 30V 5 μA
Forward Voltage VF IF = 5mA 1.42 1.60 V
Peak Pulse Current Ipp tpp = 10ms, Rep Rate 1/s 0.5 A
Operating Temperature Topr -65 +150 °C
Storage Temperature Tstg -65 +150 °C

Instructions for MMSZ5231BT1G SOD123:

  1. Handling Care: Use appropriate handling techniques to avoid damage from electrostatic discharge (ESD). The device is sensitive to ESD and should be handled with care.
  2. Mounting Orientation: Ensure correct orientation during mounting to prevent reverse polarity which can lead to device failure.
  3. Soldering Temperature: Do not exceed a soldering temperature of 260°C for more than 10 seconds to avoid thermal damage.
  4. Storage Conditions: Store in a dry environment within the specified storage temperature range to maintain reliability.
  5. Reverse Voltage Application: Do not apply reverse voltage exceeding the maximum rated value to prevent breakdown or permanent damage.
  6. Forward Current Limitation: Operate within the forward current limits to avoid overheating and potential damage.
  7. Pulse Current Handling: Be cautious with pulse currents; ensure they do not exceed the peak pulse current rating to prevent premature failure.
  8. Thermal Management: Provide adequate heat sinking if operating at high temperatures or currents to ensure long-term reliability.
(For reference only)

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