Details

---

BUY IPD60R180P7S 60S180P7 https://www.utsource.net/itm/p/9455422.html

Parameter	Symbol	Min	Typ	Max	Unit	Notes
Drain-Source On-State Resistance	RDS(on)	-	180	-	mΩ @ VGS=10V, ID=3A	-
Continuous Drain Current	ID	-	-	60	A	@ TJ=25°C
Pulse Drain Current	ID(p)	-	-	120	A	@ TJ=25°C, tp=10ms, Duty Cycle=1%
Gate-Source Voltage	VGS	-10	-	15	V	-
Drain-Source Breakdown Voltage	VDS(br)	-	-	700	V	-
Total Power Dissipation	PTOT	-	-	150	W	@ TC=25°C
Junction Temperature	TJ	-55	-	175	°C	-
Storage Temperature	TSTG	-55	-	150	°C	-

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking to maintain junction temperature within specified limits.
   • Handle with care to avoid damage to the device.

2. Electrical Connections:

   • Connect the drain (D), source (S), and gate (G) terminals correctly.
   • Use short, low-inductance leads to minimize parasitic inductance.

3. Gate Drive:

   • Apply a gate-source voltage (V_GS) of at least 10V to ensure full turn-on.
   • Avoid exceeding the maximum gate-source voltage (V_GS) of 15V.

4. Thermal Management:

   • Ensure adequate cooling to keep the junction temperature below 175°C.
   • Use thermal grease or a thermal pad between the device and the heatsink for better thermal conductivity.

5. Pulse Operation:

   • For pulse operation, ensure that the pulse duration and duty cycle do not exceed the specified limits to prevent overheating.

6. Storage:

   • Store the device in a dry, cool place to prevent moisture damage.
   • Avoid exposing the device to extreme temperatures outside the storage temperature range.

7. Safety Precautions:

   • Always follow proper safety procedures when handling high-voltage and high-current circuits.
   • Use appropriate personal protective equipment (PPE) as needed.

8. Testing:

   • Test the device under controlled conditions to verify its performance and reliability.
   • Refer to the datasheet for detailed test procedures and conditions.

(For reference only)