OSG65R290FF

OSG65R290FF

Category: Transistors

Specifications
Details

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Parameter Value Unit
Part Number OSG65R290FF -
Type Schottky Barrier Diode -
Maximum Repetitive Peak Reverse Voltage (VRRM) 650 V
Maximum Average Rectified Forward Current (IF(AV)) 290 A
Maximum RMS Current (IRMS) 204 A
Peak Surge Current Non-Repetitive (IFSM) 1200 A
Junction Operating Temperature (TJ) -55 to +175 °C
Storage Temperature Range (TSTG) -55 to +175 °C
Total Power Dissipation (Ptot) 300 W
Forward Voltage @ IF = 20A (VF) 0.75 V
Reverse Recovery Time (trr) 80 ns
Case Style TO-247-2 -

Instructions for Use:

  1. Handling and Storage: Store in a dry, cool place within the specified storage temperature range (-55°C to +175°C). Handle with care to avoid mechanical damage.

  2. Mounting: Ensure proper mounting to maintain thermal performance. Use appropriate heatsinks if necessary to manage heat dissipation effectively.

  3. Electrical Connections: Connect the diode ensuring correct polarity. The cathode is typically marked on the component or packaging.

  4. Surge Protection: Be aware of the peak surge current capability (1200A non-repetitive). Design circuits to not exceed this limit under fault conditions.

  5. Thermal Management: Monitor junction temperature to ensure it remains within operational limits (-55°C to +175°C). Excessive temperatures can lead to premature failure.

  6. Forward Current: Do not exceed the maximum average rectified forward current (290A) to prevent overheating and potential damage.

  7. Reverse Voltage: Ensure that the applied reverse voltage does not exceed the maximum repetitive peak reverse voltage (650V).

  8. Reverse Recovery Time: Account for the reverse recovery time (80ns) in high-frequency applications to avoid switching losses and potential failures.

  9. Compliance and Standards: Verify that the application complies with relevant safety and regulatory standards.

(For reference only)

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