Details

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BUY IHW20N135R5 https://www.utsource.net/itm/p/9474479.html

Parameter	Symbol	Min	Typ	Max	Unit
Drain-Source Voltage	VDS	-	-	1350	V
Gate-Source Voltage	VGS	-20	-	20	V
Continuous Drain Current	ID	-	20	-	A
Pulse Drain Current	IDpeak	-	40	-	A
Power Dissipation	PTOT	-	-	270	W
Junction Temperature	TJ	-50	-	175	掳C
Storage Temperature	TSTG	-55	-	175	掳C
Thermal Resistance	R胃JC	-	0.75	-	掳C/W

Instructions for Use:

1. Handling Precautions:

   • The IHW20N135R5 is sensitive to electrostatic discharge (ESD). Use proper ESD protection during handling and installation.
   • Avoid exposing the device to temperatures outside the specified range to prevent damage.

2. Mounting:

   • Ensure the device is mounted on a heatsink with adequate thermal conductivity to maintain the junction temperature within the specified limits.
   • Use a suitable thermal interface material (TIM) between the device and the heatsink to enhance heat dissipation.

3. Electrical Connections:

   • Connect the drain, source, and gate terminals correctly to avoid short circuits or incorrect biasing.
   • Use short and wide traces for high-frequency applications to minimize parasitic inductance and resistance.

4. Gate Drive:

   • Apply a gate voltage within the specified range to ensure reliable operation. Overvoltage can cause gate oxide breakdown.
   • Use a gate resistor to control the switching speed and reduce electromagnetic interference (EMI).

5. Overcurrent Protection:

   • Implement overcurrent protection to prevent damage from excessive current during fault conditions.
   • Monitor the drain current and limit it to the maximum continuous or pulse ratings as appropriate.

6. Thermal Management:

   • Regularly monitor the junction temperature to ensure it does not exceed the maximum rating.
   • Consider using forced air cooling or liquid cooling for high-power applications.

7. Storage:

   • Store the device in a dry, cool environment to prevent moisture absorption and degradation.
   • Keep the device in its original packaging until ready for use to protect against ESD.

8. Testing:

   • Perform initial testing at low power levels to verify correct operation before moving to full power.
   • Use appropriate test equipment and procedures to avoid damaging the device during testing.

(For reference only)