Details

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BUY M27C512-10F1 https://www.utsource.net/itm/p/9481027.html

Parameter	Description	Value
Device Type	Serial EEPROM	M27C512-10F1
Memory Size	Total Memory	64 Kbits (8 K x 8)
Operating Voltage (Vcc)	Supply Voltage Range	4.5 V to 5.5 V
Operating Temperature	Industrial Range	-40°C to +85°C
Programming Voltage	Programming Voltage (Vpp)	12.5 V ± 0.5 V
Access Time	Read Access Time	100 ns max
Write Cycle Time	Programming Time per Byte	3 ms max
Erase Cycle Time	Block Erase Time	10 ms max
Endurance	Write/Erase Cycles	100,000 cycles min
Data Retention	Data Retention Time	10 years min
Package Type	Package Style	DIP-28, PLCC-28
Pin Configuration	Pin 1 (A0)	Address Line 0
	Pin 2 (A1)	Address Line 1
	Pin 3 (A2)	Address Line 2
	Pin 4 (A3)	Address Line 3
	Pin 5 (A4)	Address Line 4
	Pin 6 (A5)	Address Line 5
	Pin 7 (A6)	Address Line 6
	Pin 8 (A7)	Address Line 7
	Pin 9 (A8)	Address Line 8
	Pin 10 (A9)	Address Line 9
	Pin 11 (A10)	Address Line 10
	Pin 12 (A11)	Address Line 11
	Pin 13 (A12)	Address Line 12
	Pin 14 (Vpp)	Programming Voltage
	Pin 15 (OE)	Output Enable
	Pin 16 (GND)	Ground
	Pin 17 (Vcc)	Supply Voltage
	Pin 18 (CE)	Chip Enable
	Pin 19 (WP)	Write Protect
	Pin 20 (Q0)	Data Output 0
	Pin 21 (Q1)	Data Output 1
	Pin 22 (Q2)	Data Output 2
	Pin 23 (Q3)	Data Output 3
	Pin 24 (Q4)	Data Output 4
	Pin 25 (Q5)	Data Output 5
	Pin 26 (Q6)	Data Output 6
	Pin 27 (Q7)	Data Output 7
	Pin 28 (NC)	No Connect

Instructions for Use

1. Power Supply:

   • Connect Vcc to a 4.5 V to 5.5 V power supply.
   • Connect GND to ground.

2. Programming:

   • Apply 12.5 V ± 0.5 V to Vpp during programming.
   • Set CE (Chip Enable) to low to select the device.
   • Set OE (Output Enable) to high to disable read operations during programming.
   • Apply the address and data lines as required.
   • Wait for the programming cycle to complete (up to 3 ms).

3. Reading:

   • Set CE (Chip Enable) to low to select the device.
   • Set OE (Output Enable) to low to enable read operations.
   • Apply the desired address to the address lines.
   • Data will be available on the Q0-Q7 outputs after the access time (100 ns max).

4. Erasing:

   • Apply 12.5 V ± 0.5 V to Vpp.
   • Set CE (Chip Enable) to low.
   • Set OE (Output Enable) to high.
   • Apply the erase command to the address lines.
   • Wait for the erase cycle to complete (up to 10 ms).

5. Write Protection:

   • Set WP (Write Protect) to high to prevent programming or erasing operations.

6. Storage:

   • Store the device in a dry environment to prevent moisture damage.
   • Ensure the device is not exposed to excessive temperatures outside the operating range.

(For reference only)