GT60M321 IGBT 60A 900V TOSHIBA TO3PL

GT60M321 IGBT 60A 900V TOSHIBA TO3PL

Category: Transistors

Specifications
SKU
9481426
Details

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Parameter Symbol Conditions Min Typ Max Unit
Collector-Emitter Voltage VCE(off) IC = 0, Tj = 25掳C - 900 - V
Gate-Emitter Voltage VGE(off) IG = 0, Tj = 25掳C -20 - 20 V
Continuous Collector Current IC TC = 25掳C - 60 - A
Pulse Collector Current IC(rms) tp = 10 ms, TC = 25掳C - 180 - A
Collector-Emitter Saturation Voltage VCE(sat) IC = 60 A, VGE = 15 V, Tj = 25掳C - 1.8 - V
Turn-On Time ton IC = 60 A, VCE = 400 V, VGE = 15 V - 0.7 - 渭s
Turn-Off Time toff IC = 60 A, VCE = 400 V, VGE = -15 V - 1.5 - 渭s
Total Storage Time tstg IC = 60 A, VCE = 400 V, VGE = 15 V - 10 - 渭s
Junction to Case Thermal Resistance Rth(j-c) - - 0.5 K/W
Junction to Ambient Thermal Resistance Rth(j-a) - - 40 K/W

Instructions for Use:

  1. Mounting and Handling:

    • Ensure that the device is mounted on a suitable heatsink to maintain the junction temperature within safe limits.
    • Handle the device with care to avoid mechanical damage and static electricity.
  2. Electrical Connections:

    • Connect the collector (C), emitter (E), and gate (G) terminals correctly to avoid damage.
    • Use appropriate wire gauges and connectors to handle the rated current.
  3. Thermal Management:

    • Monitor the junction temperature (Tj) to ensure it does not exceed the maximum allowable value.
    • Use thermal paste between the device and the heatsink to improve heat dissipation.
  4. Gate Drive:

    • Provide a sufficient gate-emitter voltage (VGE) to ensure proper turn-on and turn-off characteristics.
    • Use a gate resistor to control the switching speed and reduce electromagnetic interference (EMI).
  5. Overcurrent Protection:

    • Implement overcurrent protection to prevent damage from excessive collector current (IC).
    • Consider using a current-limiting circuit or a fuse.
  6. Storage and Operating Conditions:

    • Store the device in a dry, cool place away from direct sunlight.
    • Operate the device within the specified temperature and voltage ranges to ensure reliable performance.
  7. Testing:

    • Perform initial testing at low power levels to verify correct operation before applying full load.
    • Regularly inspect the device and connections for signs of wear or damage.

For detailed application notes and further information, refer to the datasheet provided by Toshiba.

(For reference only)

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