Details

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BUY RJH30E3 IGBT RENESAS TO3P https://www.utsource.net/itm/p/9481427.html

Parameter	Symbol	Min	Typ	Max	Unit
Collector-Emitter Voltage	VCES	-	-	1200	V
Gate-Emitter Voltage	VGE	-15	0	20	V
Continuous Collector Current	IC	-	300	-	A
Pulse Collector Current	ICM	-	600	-	A
Power Dissipation	PD	-	-	2500	W
Junction Temperature	TJ	-40	-	150	掳C
Storage Temperature	TSTG	-40	-	150	掳C
Thermal Resistance	Rth(j-c)	-	0.35	-	K/W

Instructions for Use:

1. Handling and Storage:

   • Store the device in a dry, cool place to prevent moisture damage.
   • Handle the device with care to avoid mechanical stress or damage to the leads.

2. Mounting:

   • Ensure proper heat sinking to maintain the junction temperature within the specified range.
   • Use thermal paste between the device and the heat sink for better thermal conductivity.

3. Electrical Connections:

   • Connect the gate and emitter terminals correctly to avoid short circuits.
   • Use short, thick wires for low inductance connections to minimize switching losses.

4. Gate Drive:

   • Apply a gate-emitter voltage (VGE) within the specified range to ensure reliable operation.
   • Use a gate resistor to control the turn-on and turn-off times and reduce electromagnetic interference (EMI).

5. Overcurrent Protection:

   • Implement overcurrent protection to prevent damage from excessive collector current.
   • Monitor the collector current and shut down the device if it exceeds the safe operating area.

6. Thermal Management:

   • Regularly check the temperature of the heat sink and the device to ensure it remains within the safe operating temperature range.
   • Consider forced air cooling or liquid cooling for high-power applications.

7. Testing:

   • Perform initial testing at reduced power levels to verify proper operation and thermal management.
   • Use appropriate test equipment to measure parameters such as VCE(sat), VGE, and IC.

8. Compliance:

   • Ensure that the device is used in compliance with all relevant safety and regulatory standards.

For detailed application notes and further information, refer to the Renesas datasheet and technical documentation for the RJH30E3 IGBT.

(For reference only)