Details

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BUY MMBT5551 2N5551 https://www.utsource.net/itm/p/9482058.html

Parameter	MMBT5551 / 2N5551
Type	NPN Transistor
Collector-Emitter Voltage (Vce)	60V
Emitter-Base Voltage (Veb)	6.0V
Collector Current (Ic)	600mA
Power Dissipation (Ptot)	340mW
Transition Frequency (ft)	300MHz
Storage Temperature Range	-65°C to 150°C
Operating Temperature Range	-65°C to 150°C
Package Type	SOT-23

Instructions for Use:

1. Handling Precautions: The MMBT5551 and 2N5551 are sensitive to electrostatic discharge (ESD). Handle with care, using appropriate ESD protection measures.
2. Mounting: Ensure that the transistor is securely mounted on the PCB. Pay attention to the correct orientation as indicated by the pin configuration.
3. Heat Management: Although these transistors have a relatively high operating temperature range, ensure adequate heat dissipation if used in high-power applications.
4. Biasing: Proper biasing of the base-emitter junction is crucial for optimal performance. Refer to application-specific data sheets for detailed biasing instructions.
5. Testing: Before deploying in final products, test the transistors under conditions similar to those expected in actual use to ensure reliability and performance.

Pin Configuration:

• E (Emitter): Pin 1
• B (Base): Pin 2
• C (Collector): Pin 3

Ensure that all connections are made according to the specified pinout to prevent damage or malfunction.

(For reference only)