Details

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BUY 25Q32CSIG https://www.utsource.net/itm/p/9503522.html

Parameter	Symbol	Min	Typical	Max	Unit	Description
Storage Temperature		-40		85	°C	Operating temperature range for storage
Operating Temperature		-40		85	°C	Operating temperature range
Supply Voltage	VCC	1.7	3.6	3.6	V	Supply voltage range
Standby Current	ISB		1.0		μA	Current consumption in standby mode
Active Current	IOP		5.0		mA	Current consumption during operation
Write Cycle Time	TWC		5		ms	Time required to complete a write cycle
Page Program Time	TPP		2.5		ms	Time required to program a page
Sector Erase Time	TSE		30		ms	Time required to erase a sector
Block Erase Time	TBE		200		ms	Time required to erase a block
Chip Erase Time	TCE		2000		ms	Time required to erase the entire chip
Data Retention			20		years	Guaranteed data retention time
Endurance			100,000		cycles	Number of program/erase cycles per block
Memory Density			32		Mbit	Total memory capacity
Package Type			8-pin		SOIC	Package type

Instructions for 25Q32CSIG

1. Power Supply:

   • Ensure the supply voltage (VCC) is within the specified range of 1.7V to 3.6V.
   • Connect the VCC pin to the positive power supply and GND to the ground.

2. Initialization:

   • Before performing any operations, ensure the device is powered on and stable.
   • Use the Reset command (0xFF) to initialize the device if necessary.

3. Read Operations:

   • Use the Read command (0x03) to read data from the memory.
   • Address the desired location by sending the start address followed by the number of bytes to read.

4. Write Operations:

   • Enable write operations by sending the Write Enable command (0x06).
   • Use the Page Program command (0x02) to write data to a specific page.
   • Ensure the write cycle time (TWC) and page program time (TPP) are respected to avoid data corruption.

5. Erase Operations:

   • Use the Sector Erase command (0x20) to erase a specific sector.
   • Use the Block Erase command (0x52) to erase a specific block.
   • Use the Chip Erase command (0x60) to erase the entire chip.
   • Ensure the erase times (TSE, TBE, TCE) are respected to avoid incomplete erasure.

6. Status Register:

   • Use the Read Status Register command (0x05) to check the status of the device.
   • The status register can indicate whether the device is busy, write-protected, or if an error has occurred.

7. Protection:

   • Use the Write Protect (WP) pin to prevent accidental writes.
   • Set the appropriate bits in the status register to enable or disable write protection for specific sectors or blocks.

8. Temperature Considerations:

   • Ensure the operating temperature is within the specified range of -40°C to 85°C to avoid damage or reduced performance.

9. Data Retention:

   • Store the device in a suitable environment to ensure data retention for up to 20 years.

10. Endurance:

    • Each block can withstand up to 100,000 program/erase cycles. Plan your usage to distribute wear evenly across the memory.

11. Handling:

    • Handle the device with care to avoid static discharge and physical damage.
    • Follow standard ESD (Electrostatic Discharge) precautions when handling the device.

(For reference only)