Details

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BUY 2SK3019 KN SOT523 https://www.utsource.net/itm/p/9506942.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Voltage	VDS	-60	-	-	V	-
Gate-Source Voltage	VGS	-15	-	-	V	-
Continuous Drain Current	ID	-	-	1.2	A	TC = 25掳C
Pulse Drain Current	ID(P)	-	-	3.0	A	tP = 10 渭s, TC = 25掳C
Gate Threshold Voltage	VGS(th)	1.0	1.5	2.0	V	ID = 0.25 mA
On-State Resistance	RDS(on)	-	0.85	-	惟	VGS = 4.5 V, ID = 1.2 A
Input Capacitance	Ciss	-	-	70	pF	f = 1 MHz
Output Capacitance	Coss	-	-	20	pF	f = 1 MHz
Reverse Transfer Capacitance	Crss	-	-	8	pF	f = 1 MHz
Total Power Dissipation	PTOT	-	-	0.5	W	TC = 25掳C
Junction Temperature	TJ	-	-	150	掳C	-
Storage Temperature Range	TSTG	-55	-	150	掳C	-

Instructions for Use:

1. Handling Precautions:

   • The 2SK3019 KN SOT523 is sensitive to electrostatic discharge (ESD). Handle with care and use proper ESD protection.
   • Avoid exceeding the maximum ratings listed in the table to prevent damage.

2. Mounting:

   • Ensure the device is securely mounted on a suitable PCB with appropriate soldering techniques.
   • Use a heat sink if necessary to manage thermal dissipation, especially when operating at high currents or in high ambient temperatures.

3. Biasing:

   • Apply the gate-source voltage (V_GS) carefully to ensure it remains within the specified range to avoid damaging the gate oxide.
   • The gate threshold voltage (V_GS(th)) should be considered when designing the biasing circuit to ensure reliable turn-on and turn-off of the transistor.

4. Operation:

   • The continuous drain current (I_D) should not exceed 1.2 A to prevent overheating and potential failure.
   • For pulse applications, the pulse drain current (I_D(P)) can go up to 3.0 A, but the pulse duration (t_P) should be limited to 10 渭s to avoid excessive heating.

5. Thermal Management:

   • Monitor the junction temperature (T_J) to ensure it does not exceed 150掳C.
   • Consider the storage temperature range (T_STG) when storing the device, ensuring it is kept between -55掳C and 150掳C.

6. Testing:

   • When testing the device, use the typical values provided as a reference to verify its performance.
   • Measure the on-state resistance (R_DS(on)) under the specified conditions to ensure it meets the required specifications.

7. Storage:

   • Store the device in a dry, cool place away from direct sunlight and sources of heat.
   • Keep the device in its original packaging until ready for use to protect against static and physical damage.

(For reference only)