Details

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BUY 2SCR553P GZET100 https://www.utsource.net/itm/p/9508470.html

Parameter	2SCR553P GZET100
Type	SCR (Silicon Controlled Rectifier)
Maximum Repetitive Peak Off-State Voltage (VDRM)	600 V
Maximum RMS On-State Current (IT(RMS))	5 A
Maximum Latching Current (IL)	75 mA
Maximum Holding Current (IH)	5 mA
Gate Trigger Current (IGT)	5 mA
Gate Trigger Voltage (VGT)	1.5 V
Junction Temperature (TJ)	-40掳C to +125掳C
Storage Temperature (TSTG)	-55掳C to +150掳C
Package Type	TO-220

Instructions for Use:

1. Handling Precautions: Handle the 2SCR553P GZET100 with care to avoid damage to the component and ensure it is not exposed to excessive static electricity.
2. Mounting: Ensure proper heat sinking if operating near maximum current or voltage limits to maintain junction temperature within specified range.
3. Circuit Design: Design circuits considering the maximum repetitive peak off-state voltage and RMS on-state current ratings to prevent device failure.
4. Gate Control: Apply gate trigger current and voltage within specified limits to ensure reliable triggering of the SCR.
5. Temperature Management: Monitor operating temperatures to stay within the specified junction and storage temperature ranges.
6. Storage: Store in a dry, cool place away from direct sunlight and corrosive environments.

(For reference only)